PIC TYPE Polarity PD(mW) ID(mA) IDM(mA) VDSS(V) RDS(on)(max)(Ω) RDS(on)(max)VGS(V) RDS(on)(max)ID(A) VGS(th)(V) VGS(th)ID(μA) gfs(min)(S) gfs(min)VDS(V) gfs(min)ID(A) Qg(nC)@10V(typ) MARKING PACKAGE PDF INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1014W.96
LGE1014W N 0.2 600.0 1800.0 30.0 0.335 4.5 0.6 0.95 250.0 - - - 2.23 KM SOT-323 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1015.100
LGE1015 P 0.42 -330 -1320 -30 2.5 -4.5 -0.3 -1.0 -250 - - - 1.22 1015.0 SOT-23 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1015L.103
LGE1015L P 0.15 -330 -1320 -30 2.5 -4.5 -0.3 -1.0 -250 - - - 1.22 1015.0 DFN1006-3 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1015M.104
LGE1015M P 0.15 -330 -1320 -30 2.5 -4.5 -0.3 -1.0 -250 - - - 1.22 1015.0 SOT-723 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1015T.102
LGE1015T P 0.15 -330 -1320 -30 2.5 -4.5 -0.3 -1.0 -250 - - - 1.22 1015.0 SOT-523 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1015W.101
LGE1015W P 0.25 -330 -1320 -30 2.5 -4.5 -0.3 -1.0 -250 - - - 1.22 1015.0 SOT-323 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE126E.94
LGE126E N 1.0 40.0 160.0 600.0 800.0 10.0 0.016 -2 8.0 0.017 50.0 0.01 1.14 126.0 SOT-89 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE12K0N20-6L.92
LGE12K0N20-6L N 1.25 900.0 3600.0 200.0 1.2 10.0 0.5 4.0 250.0 - - - 4.2 12K0N20 SOT-23-6L 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1N50C-3L.85
LGE1N50C-3L N 3.0 1000.0 4000.0 500.0 0.0087 10.0 0.5 3.3 250.0 0.8 15.0 0.5 6.2 1N50 SOT-23-3L 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE2231L.105
LGE2231L N 0.45 800.0 1000.0 20.0 0.28 4.5 0.5 0.65 250.0 - - - 1.4 K21 DFN1006-3 询价 INQUIRY